Applications

ADVANCED PACKAGING

Advanced packaging including 2.5D, 3D-IC, fan-out wafer-level packaging and system-in-packaging.

Adaptive patterning, large fields, and unmatched resolutions for new packaging applications are all possible with the Multicolumn E-beam Platform. MEBL is capable of volume or batch production of System in Package (SiP), MEMS & Sensor Packaging, Fan Out Packaging, and 2.5D/3D IC Packaging. Enabling next generation very large and high-density interposers.

Multibeam technology is enabling game-changing improvements in:

Wafer-scale interposers (up to >80× larger)

Adaptable patterning (>10× higher bandwidth)

On-wafer die-die stitching (stitched die transcending reticle limit, with >98% energy reduction per bit transfer)

Our dynamic, adaptive direct write technology delivers:

Up to full-wafer interposers

Extremely high-density interconnects

Very high resolution; radial lines

Accommodation of high topology, common in 2.5D/3D

WAFER-SCALE HETEROGENEOUS INTEGRATION

Make die-die interconnect performance comparable to on-die interconnects.

Demand for higher computational power is stronger than ever, but combining chips together cohesively has been a struggle. Multibeam enables unparalleled heterogenous integration, combining chip power into one. This furthers efficiency that becomes a major boon for production

Large substrate size up to full wafer, no reticle stitching

Large DoF and surface flatness mapping cuts cost in stack-chip, 3D packaging and warped substrates

Adjustable patterning overcomes die-shift problem

E-beam writing radial lines and curves enables higher chip-chip interconnect density

Multibeam enables higher bandwidth, lower energy (for bit transfer chip-chip) with higher density and shorter data lines

Chip-chip interconnects comparable to on-chip interconnects

Secure Chip ID

Security is a must in a world with counterfeiters abound. Secure Chip ID is the leading anti-counterfeit capability, capable of hard-coding unique information into each chip seamlessly during routine wafer fabrication flow. Physically patterning IDs that are buried deep within the processing helps to enable essential system level security. By ensuring the provenance of critical IC components, Multibeam avoids vulnerabilities related to conventional approaches.

Embedded during device fabrication: Provides traceability to initial chip fabrication; Can’t be counterfeited
Guaranteed unique: Necessary to assure providence
Unique, tamper-proof, hardcoded: Completely non-
volatile for life
Electrically readable: Usable for low-cost traceability or as part of secure chip architecture
Physically very small size: No impact on die size; Low cost

Rapid Prototyping / High-Mix Production

Not every iteration of a project is perfect. However, with our e-beams, device makers can adapt to imperfections and make necessary changes on the fly. This provides a steep advantage compared to optical by removing the need to design new masks for each necessary change, perfect for purpose-built applications.

Rapid Prototyping: Digital printing and maskless patterning enable rapid prototyping for faster first article delivery and system productization

Accelerate the Path to Production: Speed up the development cycle for faster cycles of learning

Multi-Project Wafers: Enable high mix production with customizable patterning

compound semiconductor/ power devices

E-beam is the top choice when it comes to reliability, stability and accuracy to pattern compound semiconductor material such as silicon carbide, gallium nitride, and other special materials.

Adapt to Topography: Easy accommodation for lack of flatness in SiC wafers

Smaller Gates: Easily meet < 60nm gate length requirements for next generation power amplifiers

Y-Axis Capability: 3D structures in high voltage, high power devices

High Resolution: < 50nm resolution on 200mm wafers

mems & sensors

The world isn’t flat, and neither are most die. With e-beam technology, MEBL can write on difficult die topography. Steps, valleys, and imperfections that can destroy a pattern pose less of an issue with Multibeam’s accuracy and FoV.

E-Beam Advantage: Large Depth of Focus (DoF) and high resolution

Wide Work Range: High Depth of Focus with variable working distance

Solution to Imperfections: System can handle wafer bow or distortions of hundreds of microns

Large Depth of Field: Columns have >10µm (DoF) for high aspect ratio (HAR) patterning

silicon Photonics

E-beam lithography is essential for fabricating nanoscale photonic and electronic components that power next-generation applications

Enables ultra-high-resolution patterning critical for pushing the frontiers of SiPho device development

High pattern accuracy: Essential for fabrication of gratings and waveguides

Optical connections at the package and device level

Faster transition from research into scalable, market-ready solutions – scaling designs from prototype to mass production

YOUR DREAM, NO LONGER JUST FOR RESEARCH

Multibeam’s unique multicolumn e-beam technology brings the high precision of e-beam direct writing to productivity levels that enable your applications to have:

100X more productive than conventional e-beam

100X larger writing field of view than optical lithography

100X Depth of Focus range of optical lithography

10X more precision than laser direct write

All on a variety of substrate types and sizes. Multibeam systems empower IC leaders to make patterns that are impossible, difficult, or too expensive for mask-based solutions, with breakthrough time to market advantages.